TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• membrane also allows for high-resolution patterning since there is less electron scattering during exposure [26]. The purpose of applying two layers of resist is to create a large undercut by using a bottom layer that is more sensitive than the top layer. This prevents the unwanted deposition of metal that

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• . In FEBID, the irradiation of the substrate with a high-energy focused electron beam results in elastic and inelastic electron scattering, including ionizing events. The latter leads to the production of numerous reactive, low-energy scattered and secondary electrons. These play a significant role in

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

• Elangovan Sarathkumar,
• Rajasekharan S. Anjana and
• Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

• are likely to occur, namely (i) the relaxation of electrons from non-Fermi levels to the Fermi level (electron–electron scattering), (ii) the cooling of hot electron gas through electron–phonon scattering, and (iii) the emission of heat to the surrounding (phonon–phonon scattering) (Figure 4A,B). The

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• resistance to electromigration and lowers the tendency to undergo diffusion, giving a higher stability in environments involving both elevated temperature and high current densities [1][3]. In current technology nodes with device dimensions below 10 nm, electron scattering becomes the dominant factor in

Current-induced mechanical torque in chiral molecular rotors

• Richard Korytár and
• Ferdinand Evers

Beilstein J. Nanotechnol. 2023, 14, 711–721, doi:10.3762/bjnano.14.57

• of freedom, assuming that the quantization levels of the rotational motion fall below the working temperature. Rotation only happens via inelastic electron tunneling. Importantly, each single electron scattering event must obey fundamental conservation laws. Therefore, the principles outlined in this

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

• linewidth is controlled solely by surface scattering in such nanoparticles [45]. For free electron metals, the frequency of electron scattering (γ) is equal to the width of the plasmon resonance (Γ) [46]: In order to account for surface scattering, the linewidth needs to be modified as, where νF is the

• studies on PT relaxation in plasmonic nanomaterials are useful in designing them for such applications. Electron–electron scattering can be understood to be the process following hot carrier generation due to plasmon relaxation, wherein thermalization of the electron distribution occurs. For a single

• scattering event, the duration of electron–electron thermalization is generally of the order of 10 fs (depending on the starting energy E) [52]. Accordingly, the influence of the initial energy on the electron–electron scattering time (τe–e) with initial energy (E) and a Fermi energy (EF) can be expressed as

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• , such as strain induced by mechanical contact between materials or gating of graphene by neighbouring layers, are important for further applications. Furthermore, electron scattering on defects modifies graphene properties in several ways, for example, additional scattering centres reduce carrier

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

• Cristiano Glessi,
• Aya Mahgoub,
• Cornelis W. Hagen and
• Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

• between precursors, probably reflecting the difference in composition, which influences the electron scattering in the pillars. Conclusion Seven gold NHC complexes of the form (Y,R)AuX were synthesized and thermally characterized. The sublimation temperature Ts of the compounds was observed to decrease

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• satellites around the specular spot caused by multiple electron scattering as reported in [30]. PTCDA was evaporated from a glass crucible. The molecular flux was also monitored by the QMS at m/z 392, which corresponds to the mass of the non-fractured PTCDA molecule. The flux was typically one monolayer per

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• region of the transfer curve, μ is seen to improve by up to 40% in two out of three devices in the blue region. For the green and red regions of IR, μ is always seen to worsen as the area of the irradiated channel is increased. μ is expected to drop heavily as the rate of electron scattering rises with

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• less light scattering in the metal interlayer [28][29][30]. The annealing treatment has successfully reduced the number of defects leading light scattering [4][36]. The enhanced structural ordering decreases the electron scattering at grain boundaries and impurities. This can lead to an increase in the

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• high probability of electron scattering at grain boundaries, material transport mainly happens at and across grain boundaries, but not within the homogeneous crystalline material that is typically assumed in most models. Therefore, deviations from these models must be expected. Focussing for the moment

Gold-coated plant virus as computed tomography imaging contrast agent

• Alaa A. A. Aljabali,
• Mazhar S. Al Zoubi,
• Khalid M. Al-Batanyeh,
• Ali Al-Radaideh,
• Mohammad A. Obeid,
• Abeer Al Sharabi,
• Walhan Alshaer,
• Bayan AbuFares,
• Tasnim Al-Zanati,
• Murtaza M. Tambuwala,
• Naveed Akbar and
• David J. Evans

Beilstein J. Nanotechnol. 2019, 10, 1983–1993, doi:10.3762/bjnano.10.195

• conclude that the prepared VCAM1-PEG5000Au-CPMV is an acceptable targeting model for further in vivo studies. STEM–EDX elemental maps Low-voltage STEM offers a contrast enhancement over conventional TEM analysis due to lower energy (20–30 kV). The higher electron scattering provides better insight into the

Direct observation of oxygen-vacancy formation and structural changes in Bi₂WO₆ nanoflakes induced by electron irradiation

• Hong-long Shi,
• Bin Zou,
• Zi-an Li,
• Min-ting Luo and
• Wen-zhong Wang

Beilstein J. Nanotechnol. 2019, 10, 1434–1442, doi:10.3762/bjnano.10.141

• bonds of these thin nanoflakes [14]. Electron irradiation of an individual nanoflake through HRTEM In order to avoid secondary electron scattering and moiré fringes in HRTEM imaging, we selected a well-isolated individual nanoflake of ca. 70 nm in size for electron irradiation experiments. The size of

• that the released atoms tend to aggregate on the surface of the flakes, and then recrystallize into new crystallites. Moreover, larger lattice spacings (d ≈ 3.768 Å, arrows indicated in Figure 2c) were observed at the edges of the irradiated flake, resulting in stronger electron scattering at the

•  3a) are present, which arise from the secondary electron scattering of the two nanoflakes. After irradiation for 4 min, these weak scattering signals were significantly weakened while a weak spotty ring appeared at ca. 3.02 nm−1. For the precipitates (red curves in Figure 3b), diffraction peaks

Pure and mixed ordered monolayers of tetracyano-2,6-naphthoquinodimethane and hexathiapentacene on the Ag(100) surface

• Robert Harbers,
• Timo Heepenstrick,
• Dmitrii F. Perepichka and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2019, 10, 1188–1199, doi:10.3762/bjnano.10.118

• spots correspond to the two symmetry-equivalent domains rotated by 90° with respect to each other. Very faint spots marked by the yellow circles are due to multiple electron scattering. These are obtained by adding the vector of the first-order substrate spots (2.18 Å−1) to those of the strong second

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• particle beams and the resolution obtained is set by the scattering of the beam in the resist layer and the underlying substrate. Scattering and range depend upon a combination of electron scattering and nuclear scattering. The latter is of particular importance for heavy ions like Ga+ and causes damage to

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• the shape anisotropy). It is worth mentioning that Δρ might be positive or negative depending on whether the electron conduction is dominant by spin-up or spin-down electron scattering as well as by the ratio between the spin–orbit coupling parameter and the splitting of the uppermost bands of the

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• in Figure 5a. There is an almost linear increase of the ΔH values with frequency, which indicates the predominance of damping through magnon–electron scattering [47]. However, for exchange-coupled trilayers an additional extrinsic relaxation channel due to two-magnon scattering (TMS) must be taken

Electronic conduction during the formation stages of a single-molecule junction

• Atindra Nath Pal,
• Tal Klein,
• Ayelet Vilan and
• Oren Tal

Beilstein J. Nanotechnol. 2018, 9, 1471–1477, doi:10.3762/bjnano.9.138

• of competing backward and forward inelastic electron scattering contributions, where the former contribution is dominant at low conductance (e.g., tunneling transport via molecular junctions [11]) and the latter one is dominant at high conductance (e.g., transport at the contact regime via atomic

New 2D graphene hybrid composites as an effective base element of optical nanodevices

• Olga E. Glukhova,
• Igor S. Nefedov,
• Alexander S. Shalin and
• Мichael М. Slepchenkov

Beilstein J. Nanotechnol. 2018, 9, 1321–1327, doi:10.3762/bjnano.9.125

• characterizing electron scattering processes. To calculate the elements of the impulse matrix , the known substitution P(k)→ was used, where is the Hamiltonian. The detailed description for the calculation of the matrix elements of the momentum operator is given in [18]. The Hamiltonian was constructed within

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• hydrogenated compounds [38]. The condensed compound here has also a longer carbon chain, fully fluorinated, and can have additional fragmentation routes not included in the gas-phase study. The cross section deduced here is 100 times smaller than the total electron scattering on formic acid, around 4 × 10−15

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• evidence is obtained to fully ascribe the observed additional lateral growth to this effect only. The electron scattering in deposits from DCSCH and SCH may be different, resulting in different electron yields. Also, the two types of precursor molecules may behave differently when introduced in the

Comprehensive investigation of the electronic excitation of W(CO)₆ by photoabsorption and theoretical analysis in the energy region from 3.9 to 10.8 eV

• Mónica Mendes,
• Khrystyna Regeta,
• Filipe Ferreira da Silva,
• Nykola C. Jones,
• Søren Vrønning Hoffmann,
• Gustavo García,
• Chantal Daniel and
• Paulo Limão-Vieira

Beilstein J. Nanotechnol. 2017, 8, 2208–2218, doi:10.3762/bjnano.8.220

• of relevance to estimate neutral dissociation cross sections of W(CO)6, a precursor molecule in focused electron beam induced deposition (FEBID) processes, from electron scattering measurements. Keywords: cross sections; density functional theory (DFT) calculations; focused electron beam induced

Charge transfer from and to manganese phthalocyanine: bulk materials and interfaces

• Florian Rückerl,
• Daniel Waas,
• Bernd Büchner,
• Martin Knupfer,
• Dietrich R. T. Zahn,
• Francisc Haidu,
• Torsten Hahn and
• Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 1601–1615, doi:10.3762/bjnano.8.160

• ions. In IPES [19][40][41][42], the unoccupied density of states is probed. EELS [43][44][45] can also be called inelastic electron scattering and measures the electronic excitations either in the valence-band region, or from core levels into unoccupied states, whereas momentum-dependent studies are

Fixation mechanisms of nanoparticles on substrates by electron beam irradiation

• Daichi Morioka,
• Tomohiro Nose,
• Taiki Chikuta,
• Kazutaka Mitsuishi and
• Masayuki Shimojo

Beilstein J. Nanotechnol. 2017, 8, 1523–1529, doi:10.3762/bjnano.8.153

• substrate at accelerating voltages of 20 kV and 2 kV. Most electrons arrive at the surface in a diameter of 6.0 μm at 20 kV, and 0.1 μm at 2 kV, respectively. This is in good agreement with the experimental results shown in Figure 5. This suggests that the widening is caused mostly by the electron

• scattering in the substrate. The backscattering ranges were theoretically analyzed for several materials at various electron energies by Kanaya [9], and the results agree well with our MC results. The effects of electron-beam conditions including accelerating voltage and beam scan speed, obtained by